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Parameter

Customer Requirement

        Result (PR mask)

Etch rate

≥2500Å/min

        ~2600Å/min

Selectivity to mask (PR)

1:01

     ≥1:1

With in Wafer Non- Uniformity

≤± 5%

     ≤± 3%

Wafer To Wafer Non-Uniformity

≤± 3%

      ≤± 2.5%

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