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Supplier Start Up Overview and Results

Start up requirements and results from factory qualification are given

Start Up Overview

Summary

 

1.  Process qualification of VLN ICP SiO2 film based on previously agreed upon specification.


2.  Thermal Oxide (SiO2) etch with PR mask were performed to obtain etch rate, selectivity to PR mask.

3.  Target Etch rate of SiO2 ≥0.25μm/min. with target selectivity to PR ~1:1. 

4.  Stanford University provided 5 full 4inch wafers with PR mask.

5.  All Process specification for SiO2 etch were met.

 

 

Start Up Results

 

Initial Results

 

Parameter

Customer Requirement

        Result (PR mask)



Etch rate

≥2500Å/min

        ~2600Å/min



Selectivity to mask (PR)

1:01

     ≥1:1



With in Wafer Non- Uniformity

≤± 5%

     ≤± 3%



Wafer To Wafer Non-Uniformity

≤± 3%

      ≤± 2.5%



 

Original Vendor Qual Recipe Settings

 

Parameter

Value

Time (sec)

120

Pressure (mTorr)

5

ICP Power (Watts)

400

Bias Power (Watts)

150

CHF3 (sccm)

50

Electrode Temperature (°C)

25

Vendor Qual Process Repeatability

 

Run No.

    Run1

     Run2

    Run3

    Run4

    Run5

Average SiO2 Etched

    5207

    5236

    5222

    5320

    5244

Average PR etched

    4751

    4936

    4576

    4639

    4370

SiO2 Etch Rate

    2604

    2618

    2611

    2660

    2622

Selectivity (SiO2:PR)

    1.10

    1.06

    1.14

    1.15

    1.20

With In wafer Non-Uniformity

    0.44

    0.59

    0.58

    0.55

    0.40

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