1. Process qualification of VLN ICP SiO2 film based on previously agreed upon specification.
2. Thermal Oxide (SiO2) etch with PR mask were performed to obtain etch rate, selectivity to PR mask.
3. Target Etch rate of SiO2 ≥0.25μm/min. with target selectivity to PR ~1:1.
4. Stanford University provided 5 full 4inch wafers with PR mask.
5. All Process specification for SiO2 etch were met.