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IntlVac Nanochrome I Sputter System, intlvac_sputter

1.1. The Intlvac_sputter tool is designed for DC, Dual-AC, and RF magnetron sputtering. All three magnetrons use 3" target materials. The front two magnetrons are used individually in DC mode or in dual-AC mode. Dual AC mode is used for increased deposition rates for metallic, but works especially well for reactively deposited films. The back gun is only for RF mode. Other capabilities include an ion source for pre-sputter cleaning and/or ion-beam assisted deposition, quartz lamps for heated depositions and DC wafer bias. In addition to Ar, O2 and N2 are plumbed to the chamber for reactive depositions.

Picture and Location

 

The tool is located at XXYY on the Lab Map.

Background

 

Process Capabilities

Cleanliness Standard

The system is only to be used for clean or semi-clean depositions, no gold category processing is allowed.  If you have any questions regarding the use of the system, make sure to ask prior to loading your samples. 

Performance of the Tool

What the Tool CAN do

  • Sources provided by the SNF: Al, Al-1%Si, Al-2%Si, Al-1%Si-0.5%Cu, Co, Cr, Hf, Mo, Nb, Ni, Ni-7%V Pd, Pt, Si(B), Ta, Ti, TiW, V, W and Zr.
  • Reactive depositions of oxides and nitrides is possible for many of these materials.  
  • Pt deposition is allowed, but you must provide your own sputter target.

 

What the Tool CANNOT do

  • "Gold" processing

 

Process Monitoring

 

Contact List and How to Become a User

Contact List

The following people make up the Tool Quality Circle:

  • Process Staff: Maurice Stevens
  • Maintenance: Jim Haydon
  • Super-Users:

 

Training to Become a Tool User

Training consists of three steps.  Step one is a review of your process requirements with the listed process staff.  This review is to make sure your requirements match the capability of the tool and to decide on the best approach to meeting your requirements.  The second step is a general training at the system to review the the system, it's configuration, software and to discuss the correct protocol while using the system.  The third step is have the staff present at check-out or your first run.  Once all three steps have successfully been completed, you will receive an individual log-in account on the system.

Operating Procedures

 

 

1.   Target Material Verification

         1.1    Prior to reserving the tool, confirm the currently loaded targets are the ones needed for your deposition.  If not, arrange with a staff member or super user to make sure the targets your require will be installe

         1.2    You many not change targets yourself until approved.

2.   Initial System Checks

       2.1    Review the maintenance history on Badger.  If there is concern, do not proceed and contact a staff member.

       2.2    If the tool is functional and safe to use, enable Intlvac_sputter under your Badger account.

      2.3    On the tool touch screen, press the Chamber tab.  The chamber pressure should be below 5.0E-7  Torr unless another user has recently used the tool.  If the pressure seems unusual, report the problem on Badger, contact staff and do not proceed with your deposition.

      2.4    Verify the Cryo temperature:

         2.4.1   If the Cryo temperature is below 15K, continue with your deposition.

         2.4.2   If  the Cryo temperature is between 15K and 20K, notify staff, add a problem report on Badger and continue your deposition.

         2.4.3   If the Cryo temperature is above 20K, shut the tool down on Badger and notify staff.

 

3.    Venting the Process Chamber

   3.1   Touch the “Log On” button on the computer touch screen.

   3.2   Enter your username and password.  Do not sure your tool login.  The “Log On” button will only be active if the tool is enabled on Badger.

   3.3   Press “Vent Chamber”.

   3.4   The gate valve will close and the chamber will be vented with N2.  After ~5 min, a green indicator under the pressure gauge will appear stating “Chamber Vented”.  The chamber is now at atmospheric pressure.

   3.5   The longer the chamber is at atmosphere, the more water and other contaminates can be absorbed into the chamber walls, increasing pump down time.  Work quickly and efficiently.

 

4.   Inspecting the Process Chamber

   4.1    Once the Process chamber has reached atmosphere, open the hinged door on the front of the chamber.

   4.2   Check the inside of the chamber (including walls, sputter guns, targets, lamps, shutters, and Ion source filament) for signs of damage.

   4.3   If you notice anything out of the ordinary,  report it on Badger and contact staff.

   4.4   The process chamber must be clean and free of any flaking prior to running your process.

   4.5   If you see metal flakes on the chamber walls, underneath the shutters or in the process chamber, use the vacuum hose behind the tool to clean them. Do Not use the Innotec Hose.

   4.6   Make sure to cover the end of the hose with clean wipes.

 

5.   Loading Samples

   5.1   Arrange enough clean wipes on the tools table to hold the wafer carrier.

   5.2   Put on clean gloves and then use two hands to remove the wafer carrier by lifting it off the stage pins, rotating it counter clock wise and lower it such that the pins are guided out of the slots on the holder.

   5.3   Place holder on clean wipes and close the chamber door.

   5.4   Use clean non-metal tweezers to remove as many dummy wafers as required from the holder and place them in the storage box.

   5.5   Load your wafers into the holder face down with the flats toward the center of the carrier.

   5.6   All slots must be occupied.

   5.7   Verify there are no gaps between wafers and carrier.

   5.8   Open the chamber door, change your gloves and place wafer holder on the stage by guiding the pins back into the slots.

   5.9   Verify all the wafers are seated correctly and the holder is correctly on the pins.

 

6.   Pumping the Process Chamber

   6.1    Close the chamber door and lock the latch.

      6.1.1      The door latch indicator on the Chamber tab will appear to inform you that the latch has been closed successfully.

   6.2    Press “Pump Chamber”.

   6.3    Shortly after the roughing pump starts, the latch handle will fall from the upright position.  This is normal.

   6.4    You must wait until the chamber pressure reaches 30mT, the crossover between the roughing pump and the Cryo pump.  You must verify the gate valve opens and the system is pumping to process pressure.

   6.5    The chamber pressure must be 5.0E-7 Torr or below before you can start a process.  Pump down time is ~2hrs.  You may leave the tool during this time.

 

7.   Running a Recipe

   7.1    The top line on the Chamber Screen should read “Ready for Process”.

   7.2    Press the Film Tab.

   7.3    If you have a saved recipe:Retrieve it by pressing the “Open Film File” button and selecting your recipe from the file folder.

      7.3.1   If you are editing a recipe see section 11.0.

   7.4    Verify all recipe parameters are correct.

   7.5    Verify you are in the segment (process step) that you would like the tool to start.

   7.6    If all parameters and starting segment are correct, press “Send Profile” button.

      7.6.1   The “Mag Process Ready” indicator should be green.

   7.7    Verify appropriate power supplies are on.

   7.8    Press the “Run Process” toggle switch to begin process.

   7.9    Press the Chamber Tab to monitor the system during the process.

   7.10  Fill in all the deposition parameters in the logbook.

   7.11  You can abort the process at any time be pressing the “Abort Process”    button. The Abort Process will stop all of the deposition parameters and sequences and place the process chamber under vacuum.

 

8.   Venting the Process Chamber

   8.1    When the process is finished, wait 15 minutes to allow the ion source and the targets to cool.

   8.2    Press “Vent Chamber” after 15 minutes wait.

   8.3    Arrange enough clean wipes on the tools table to hold the wafer carrier.

   8.4    When the chamber is at atmosphere, open the process chamber door.

   8.5    Put on clean gloves and remove the wafer holder.

   8.6    Place wafer holder on clean wipes and close chamber door.

   8.7    Using clean non metal tweezers unload your wafers and replace them with dummy wafers. All slots must be occupied.

   8.8    Open the chamber door, change your gloves and place wafer holder on the stage by guiding the pins back into the slots.

   8.9    Verify all the wafers are seated correctly and the holder is correctly on the pins.

   8.10  Check the inside of the chamber (including walls, sputter guns, targets, lamps, shutters, and Ion source filament) for signs of damage.

   8.11  If you see metal flakes on the chamber walls, underneath the shutters or in the process chamber, use the vacuum hose behind the tool to clean them. Do Not use the Innotec Hose.

   8.12  Close the chamber door and lock the latch.

   8.13  Press “Pump Chamber”.

      8.13.1   You must wait until the chamber pressure reaches 30mT, the crossover between the roughing pump and the Cryo pump.  You must verify the gate valve opens and the system is pumping to process pressure.

   8.14   Clean up area around tool, press “Log Off” on touch screen and disable tool on Badger.

9.   Editing a Recipe

   9.1    Press the Film Tab.

   9.2    If you have a saved recipe or know of a similar recipe :Retrieve it by pressing the “Open Film File” button and selecting your recipe from the file folder.

   9.3    Define your process in the Film Stack table.

      9.3.1   Each row corresponds to a step or “segment” in the process.

      9.3.2   To edit a row, double click on the row.  This will cause the row to appear in the table in the middle of the screen.  You can only change the parameters in the single row displayed at the middle of the screen.

 

10.   Recipe Parameter Definitions and Ranges

   10.1   Segment: Counter for each step in the process.

   10.2    Material Index: “1” for all enabled segments in the process. “-1” stops the process and causes all subsequent segments to be ignored.

   10.3     DC Bias: DC bias in volts applied to the wafer holder. Range:?

   10.4      RF Power: For RF mode, the power inWatts. “0” for all other modes. RF Power Range: 30-400W.

   10.5      Dep Time: Deposition time in HH.MM.SS format.  Maximum Dep Time:?

   10.6      Ion Source Ar: Flow of Ar to the Ion source.  Ar range: 2-20sccm

   10.7       Chamber O2: Flow of O2 to the chamber. O2 range:?

   10.8        Chamber N2: Flow of N2 to the chamber. N2 range:0-100sccm.

   10.9        Gun Mode: Selects the guns for deposition and how it is controlled.

      10.9.1   Gun Mode 0:Dual AC power

      10.9.2   Gun Mode 1:DC Left

      10.9.3   Gun Mode 2:DC Right

      10.9.4   Gun Mode 3:Dual AC Voltage

      10.9.5  Gun Mode 4:Dual AC Current

      10.9.6  Gun Mode 5:RF power

   10.10   Ion Source Discharge Volts: Max voltage between anode and cathode in the ion source(0-250).  The mean ion energy is ~60% of the discharge voltage in eV.  Allowable Discharge Power (voltage x current) must be less than 180W.

   10.11   Ion Source Discharge Current: Max current between anode and cathode in the ion source(0-0.8A).  The ion beam current  is ~20% of the discharge current.  Allowable Discharge Power (voltage x current) must be less than 180W.

   10.12   Ion Source Emission Current: Electron in amps emitted from the filament. Must be set 10-25% higher than the discharge current.

   10.13   Warmup Time: For the pre-sputter etch segment, the etch time.  For deposition segments, the time the gun is on with the shutter closed.  Formatted as HH.MM.SS

   10.14   Gate Position: Position of the gate valve: “0” for open, “1” for throttle (partial open…”1” is require during deposition).

   10.15    Heat Enabled: not avail.

   10.16    Heat SetP: not avail.

   10.17    Temp Inc: not avail.

   10.18     Time Inc: Not avail.

   10.19     Mag Ar Start: Flow of Ar to the chamber in sccm (0-100) at which to ignite the sputter gun plasma.  After ignition, flow will ramp to process setpoint. Typically 80sccm.

   10.20      Isrc Ar Start: Flow of Ar to ion source in sccm (0-100) at which to ignite the ion source plasma.  After ignition, flow will ramp to setpoint. Typically 15sccm.

   10.21      Spin Speed: Rotation speed of the wafer stage in revolutions per minute (0-200).  Typically 30RPM.

   10.22      Bias V Ramp: Time in sec over which to ramp to the DC Bias setpoint.

   10.23       DC Mag Ramp: Time in sec over which to ramp the power in DC mode.

   10.24      If you wish to save your process for future use, press the “Save Film File” button and provide a unique name.

 

 

 

System Start-Up Report

 

 

Process Monitoring and Machine Qualification

Tool Qualification Run

 

Frequency

 

Procedure

 

Responsibility

 

 

Recommendation to users with critical processes

 

Machine Status States

Red:

Yellow:

Green:

 

Process Monitoring Results

Al-1%Si  400w dual AC  ~93A/min

Al-1%Si  500w dual AC  ~143A/min

Al-1%Si  900w dual AC  ~320A/min

 

External Alternatives

 
Below is a list of external vendors that lab members have used for metal deposition:
 
  1. UHV Sputtering - their "System 4" is semi-clean and can process 22 wafers per run.
  2. LGA films - has a semi-clean sputter tool with Al, Ti and W. Their Al-1% Si target is in a gold-contaminated sputter tool.
  3. Hionix

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