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ExFab (previously known as nSiL)

Ex Fab (previously known as nSiL) complements the resources available in the main SNF cleanroom. This new space allows researchers to integrate “bottom-up” synthetic chemical methods with the “top-down” device processing methods to create new nanostructure-based materials and devices. Specific areas of focus are the synthesis, functionalization, and manipulation of nanoparticles, nanostructures and surfaces.
PDS 2010 LABCOTER™ 2 Parylene Deposition System
Glovebox
A custom-built, dual-chamber N2 glovebox for sample preparation and spin-coating at reduced oxygen and moisture content. The left-side contains spin-coater and hot-plates, while the right one presently has a dual hot-plate/stirrer setup with stands for supporting glassware. Custom setups may be accommodated, with prior approval from staff.
Heidelberg MLA 150
The MLA150 is a high speed direct write lithography tool extended by capabilities formerly only available on Mask Aligners. It can expose the patterns directly without prior fabrication of a mask resulting in a significantly shorter prototyping cycle. It offers topside alignment and backside alignment with high accuracy, and a light source which generates sufficient dose to expose even thick and less sensitive resists. The sample size range allowed on MLA150 are 8mmX8mm square to 150mm diameter wafer and allowed thickness range from 100um - 6mm. MLA 150 provides for flexible change of pattern, distortion compensation and other software corrections. For backside alignment, the substrate needs to be big enough that the alignment marks can be seen through the slots on the chuck. Please refer to the chuck dimensions on page 69 of the user guide attached below. Currently, the exposure wavelength is 405nm in the tool. Please use resists that can be exposed at 405nm or higher wavelengths. Please contact Swaroop Kommera if you have any questions regarding the substrates or resists that can be used. The system can produce structures down to 1 µm. The alignment accuracy can be as good as 250 nm under optimized conditions.

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