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List of Develop and Bake Programs

The following programs and bake temperature should NOT be changed!


STANDARD DEVELOP PROGRAMS TRACKS 1 (back) & 2 (front)

dispenser 1: Shipley MF-26A surfactant

PEB (Post Exposure Bake) Programs:

Bake #1 - 110°C for 60 seconds
                                  PEB for SPR3612 1.0µm

Bake #3 - 110°C for 90 seconds

                                  PEB for SPR3612 1.6µm or SPR 955 CM-.07


Develop Programs:

Develop #2 - I-line resist SPR 955 CM-.7, 0.7 µm and 1.0µm (event #5 rinse)

Develop #5 - I-line resist SPR 955 CM-.7, 0.7 µm and 1.0µm (event #5 no rinse)

Develop #3 - SPR3612 1 µm

Develop #4 - SPR3612 1.6µm

Develop #6 - SPR220-7 7µm

Develop #7 - SPR220-3 3 - 4 µm

Develop #1 and #8 - no standard program

Develop #9 - Bake only! This program skips the develop step.

 

Hardbake Programs:

Bake #1 - 110°C for 60 seconds
                                  Hardbake for SPR3612 1.0µm or SPR 955 CM-.07

Bake #2 - 110°C for 120 seconds
                                  Hardbake for SPR3612 1.6µm

Comment:

For SPR220-3 or SPR220-7 resists: a hardbake after development is not required!

Failure to follow these rules will result in removal from user list and mandatory re-training.

DEVELOP PROGRAM #2: Shipley SPR 955 CM-.7 Resist 0.7 µm and 1.0µm



1.step
PEB (Post Exposure Bake)
 select Develop #9 and Bake #3 (PEB 90 seconds)

 

2.step
select DEVELOP #2 and Bake #1 (hardbake 60 seconds)


Event
Operation
Time
Speed
Accel
1
SPIN
01.0
5.00
20
2
SPRAY1
02.0
1.00
20
3
STREAM1
03.0
0.08
20
4
SPIN
22.0
0.00
20
5
RINSE
5.0
0.80
20
6
STREAM1
01.0
0.08
20
7
SPIN
22.0
0.00
20
8
RINSE
15.0
0.80
20
9
SPIN
20.0
5.00
20

 

 

 

 

 

no rinse!

 

DEVELOP PROGRAM #5: Shipley SPR 955 CM-.7 Resist 0.7 µm and 1.0µm

 

1.step
PEB (Post Exposure Bake)
 select Develop #9 and Bake #3 ( PEB 90 seconds)

 

2.step
select DEVELOP #5 and Bake #1 (hardbake 60 seconds)


Event
Operation
Time
Speed
Accel
1
SPIN
01.0
5.00
20
2
SPRAY1
02.0
1.00
20
3
STREAM1
03.0
0.08
20
4
SPIN
22.0
0.00
20
5
SPRY1
5.0
0.80
20
6
STREAM1
01.0
0.08
20
7
SPIN
22.0
0.00
20
8
RINSE
15.0
0.80
20
9
SPIN
20.0
5.00
20

 

 

DEVELOP PROGRAM #3: Shipley SPR 3612 RESIST 1.0µm

 

1.step
PEB (Post Exposure Bake) 60 seconds
 select Develop #9 and Bake #1 (PEB 60 seconds)

 

2.step
select DEVELOP #3 and Bake #1 (hardbake 60 seconds)



Event

Operation

Time

Speed

Accel

1

SPIN

01.0

5.00

20

2

SPRAY1

02.0

1.00

20

3

STREAM1

03.0

0.08

20

4

SPIN

20.0

0.00

20

5

RINSE

5.0

0.80

20

6

STREAM1

03.0

0.08

20

7

SPIN

20.0

0.00

20

8

RINSE

15.0

0.80

20

9

SPIN

20.0

5.00

20


DEVELOP PROGRAM #4: Shipley SPR 3612 RESIST 1.6µm


1.step
PEB (Post Exposure Bake)
 select Develop #9 and Bake #3 (PEB 90 seconds)

 

2.step
select DEVELOP #4 and Bake #2 (hardbake 120 seconds)


Event

Operation

Time

Speed

Accel

1

SPIN

01.0

5.00

20

2

SPRAY1

02.0

1.00

20

3

STREAM1

03.0

0.08

20

4

SPIN

45.0

0.00

20

5

RINSE

5.0

0.80

20

6

STREAM1

03.0

0.08

20

7

SPIN

45.0

0.00

20

8

RINSE

15.0

0.80

20

9

SPIN

20.0

5.00

20

 


DEVELOP PROGRAM #6 SPR220-7 RESIST 7µm

Event

Operation

Time

Speed

Accel

1

STREAM1

10.0

0.08

20

2

SPIN

90

0.00

20

3

STREAM1

10.0

0.08

20

4

SPIN

90

0.00

20

5

STREAM1

10.0

0.08

20

6

SPIN

90

0.00

20

7

SPRAY1

15.0

0.80

20

8

RINSE

20.0

0.80

20

9

SPIN

20.0

5.00

50

 

 DEVELOP PROGRAM #7 SPR220-3 RESIST 3 - 4 µm

Event

Operation

Time

Speed

Accel

1

STREAM1

10.0

0.08

20

2

SPIN

50.0

0.00

20

3

STREAM1

10.0

0.08

20

4

SPIN

50

0.00

20

5

STREAM1

10.0

0.08

20

6

SPIN

50

0.00

20

7

SPRAY1

15.0

0.80

20

8

RINSE

20.0

0.80

20

9

SPIN

20.0

5.00

50


To skip the developer station use:

DEVELOP PROGRAM #9

Event

Operation

Time

Speed

Accel

1

END

0

0

0

 


 

 

STANDARD BAKE PROGRAMS TRACK 1 (back) and 2 (front)

TEMP 110°C

BAKE PROGRAM #1 ( hardbake for 3612 1.0 µm, or SPR 955 CM-.7 0.7 µm or 1 µm,
                                 or PEB)

Event

Operation

Time

1

BAKE

60.0

2

END

0

BAKE PROGRAM #2 ( hardbake for 3612 1.6 µm)

Event

Operation

Time

1

BAKE

120.0

2

END

0


BAKE PROGRAM #3 for PEB (Post Exposure Bake)

Event

Operation

Time

1

BAKE

90.0

2

END

0


Comment:

For SPR220-3 and SPR220-7 resists: a hardbake after development is not required!

 

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