Wet Bench Clean
The Wet Bench Clean-1 and 2 is used for cleaning 3", 4", and 6" silicon, silicon germanium, or quartz wafers prior to processing in diffusion furnaces, LPCVD furnaces or before metal deposition. The cleans performed here are high quality, final cleans which precede high temperature processing. To be processed at this station, wafers may not contain or have ever contained any metals, nor been exposed to equipment which may pose this contamination risk. This station contains 2 sets of SC1 and SC2 cleans, HF tanks in addition to dump rinse and spin-rinse-dry modules. The available chemical baths are: 5:1:1 H2O:H2O2:NH4OH for removal of trace organics, 5:1:1 H2O:H2O2:HCl for removal of trace metal ions, 50:1 HF, and 6:1 BOE for oxide etching.