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20140515 K. Dowling- Use of Copper Mask in SF6/O2 chemistry in PT MTL

PROM form and supporting documents for Use of Copper Mask in SF6/O2 chemistry in PT MTL.
File 20140515 K. Dowling- Use of Copper Mask in SF6/O2 Chemistry in PT-MTL
PROM form and supporting documents as single pdf file. Request rejected due to high risk of copper chloride etch byproducts causing contamination for subsequent users as well as blocking the ICP coupling of the plasma. Supporting documents include: 1) Reference paper regarding Copper dry etching with Cl2/Ar Plasma Chemistry, 2) Reference paper regarding Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching, 3) Reference paper regarding etch rate of 6H-SiC in SF6 based ICP processes, 4) Reference paper regarding High-Rate Anisotropic Etching of Silicon by Remote Microwave Plasma in SF6, 5) MSDS for Copper, 6) MSDS for Copper oxide, 7) MSDS for Copper Fluoride

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