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Diffusion Clean for LPCVD or Metal Deposition of Non-Metal Wafers (clean)

This module covers the cleaning of wafer for LPCVD, Sputtering or E-Beam dep (LTO, TEOS, TEL, poly, nitride and metal deposition). This clean is used where the interface of Si to the deposited material must be free of oxide.

Clean for LPCVD or Metal Deposition

Purpose: 

 A three step cleaning process is used to remove 1) any surface organic material, 2) any trace metals that may be on the surface of the wafers and 3) any native oxide that may have grown on the surface of the wafers.   This clean leaves the wafer surface clean of any mobile ions in preparation for high temperature processing.

Equipment:

Wbclean-1 and-2

 

Time of Execution:

Approximately one hour.

 

Step Summary:

Step 1

time = 10:00 minutes

temperature = 50°C

chemical = 5:1:1 H2O:H2O2:NH4OH

dump rinse

 

Step 2

time = 10:00 minutes

temperature = 70°C

chemical = 5:1:1 H2O:H2O2:HCl

dump rinse

 

Step 3

time = 30 seconds

temperature = room temp

chemical = 50:1 HF

dump rinse

spin dry

 

NOTE: the wafers must be re-cleaned if they have been allowed to sit for more than 60 minutes before loading in the dep system. 

Detailed Procedure:

Please see operating instructions for wbclean-1 and-2.

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