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Resist Strip for Standard Metal Wafers- dry/wet (semi-clean)

This process module describes resist stripping using dry and wet chemistry for wafers that have standard metal layers. It would be used to remove hardened or damaged resist after ion implantation or plasma etching esp. plasma chemistry producing polymer on the surface of the wafers.

RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS OR PLASMA POLYMER FOR METALIZED WAFERS

Purpose:  Oftentimes after a heavy dose or high energy implant step the resist is damaged enough to require more than the usual PRX-127 step.  An oxygen plasma may ‘soften’ or altogether remove the resist.  In extreme cases this two step process may be repeated.

This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.

Equipment:  gasonics

Time of Execution:  approximately 3 minutes per wafer

Step 1 Summary:

time = 90 seconds

Program name = 013

 

Followed by;

 

Equipmentwbmetal

Time of execution: approximately 40 minutes

Step 2 Summary:

time = 20:00 minutes

temperature = 40°C

chemical = PRX-127

dump rinse

spin dry

 

Repeat Gasonics step and PRX-127 Strip if necessary.

Detailed Procedure:  Please refer to the operating instructions for gasonics and wbmetal.

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