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Resist Strip for Non-Standard Metal Materials, dry/wet (contaminated)

This module contains information about stripping resist using plasma ashing and wet chemicals for contaminated wafers.

Purpose:  This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.  Heavy implant damaged resist may be removed by this process.

Equipment: matrix

Time of Execution:  approximately 7 minutes per wafer

Step 1 Summary:

time = 4 minutes/wafer (maximum programmable time is 4:59)

Program name = STDO2STR

 

Followed by;

 

Equipment; wbgen or wbgaas

Time of execution: approximately 40 minutes

Step 2 Summary:

time = 20:00 minutes

temperature = 40°C

chemical = PRX-127 (samples must be dry before going into this chemical)

overflow rinse

airgun dry

 

NOTE: Use your own designated Glass  etch beaker to prevent contaminating your wafers. If your wafers are already contaminated you may use the beakers on holders at the wbgeneral (all of them are contaminated). Once you use a contaminated beaker -- your wafers must be considered contaminated and are restricted as to what equipment they may use. 

 

Repeat Matrix step and PRX Strip if necessary.

Detailed Procedure:  Please refer to the operating instructions for matrix and wbgen or wbgaas.

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