Resist Strip for Non-Standard Metal Materials, dry/wet (contaminated)
Purpose: This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer. Heavy implant damaged resist may be removed by this process.
Time of Execution: approximately 7 minutes per wafer
Step 1 Summary:
time = 4 minutes/wafer (maximum programmable time is 4:59)
Program name = STDO2STR
Time of execution: approximately 40 minutes
Step 2 Summary:
time = 20:00 minutes
temperature = 40°C
chemical = PRS-3000 (samples must be dry before going into this chemical) (note, PRS3000 etches copper)
NOTE: Use your own designated glass etch beaker to prevent contaminating your wafers. If your wafers are already contaminated you may use the beakers and holders at the wbflexcorr-3and-4 (most of them are contaminated). Once you use a contaminated beaker -- your wafers must be considered contaminated and are restricted as to what equipment they may use.
Repeat Matrix step and PRS Strip if necessary.