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Resist Strip for Non-Standard Non-metal Materials, dry/wet (contaminated)

This module describes the procedure for the stripping of particularly tough resist from contaminated full four inch wafers or other shaped samples, like pieces of four inch wafers.

RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS OR PLASMA POLYMER FOR CONTAMINATED NON-METAL WAFERS

Purpose:  Oftentimes after a heavy dose or high energy implant step the resist is damaged enough to require more than the usual piranha step.  An oxygen plasma may ‘soften’ or altogether remove the resist.  In extreme cases this two step process may be repeated.

This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.

Equipment: matrix

Time of Execution:  approximately 7 minutes per wafer

Step 1 Summary:

time = 4 minutes/wafer (maximum programmable time is 4:59)

Program name = STDO2STR

 

Followed by;

 

Equipment; wbflexcorr-3and-4 (in beakers only) or wbflexcorr-1and-2 (hot bath available)

Time of execution: approximately 40 minutes

Step 2 Summary:

time = 20:00 minutes

temperature = 120°C

chemical = 9:1 H2SO4:H2O2

overflow rinse

airgun dry

 

NOTE: Use your own designated Glass  etch beaker to prevent contaminating your wafers. If your wafers are already contaminated you may use the beakers on holders at the wbflexcorr (most of them are contaminated). Once you use a contaminated beaker -- your wafers must be considered contaminated and are restricted as to what equipment they may use. 

 

Repeat Matrix step and Sulfuric Peroxide Strip if necessary.

Detailed Procedure:  Please refer to the operating instructions for matrix and wbbflexcorr-3and-4 or wbflexcorr-1and-2.

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