Resist Strip for Non-Standard Non-metal Materials, dry/wet (contaminated)
RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS OR PLASMA POLYMER FOR CONTAMINATED NON-METAL WAFERS
Purpose: Oftentimes after a heavy dose or high energy implant step the resist is damaged enough to require more than the usual piranha step. An oxygen plasma may ‘soften’ or altogether remove the resist. In extreme cases this two step process may be repeated.
This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.
Time of Execution: approximately 7 minutes per wafer
Step 1 Summary:
time = 4 minutes/wafer (maximum programmable time is 4:59)
Program name = STDO2STR
Time of execution: approximately 40 minutes
Step 2 Summary:
time = 20:00 minutes
temperature = 120°C
chemical = 9:1 H2SO4:H2O2
NOTE: Use your own designated Glass etch beaker to prevent contaminating your wafers. If your
wafers are already contaminated you may use the beakers on holders at
the wbgeneral (all of them are contaminated). Once you use a contaminated
beaker -- your wafers must be considered contaminated and are restricted as
to what equipment they may use.
Repeat Matrix step and Sulfuric Peroxide Strip if necessary.