Resist Strip for Non-Standard Non-metal Materials, wet (contaminated)
Purpose: Use of piranha (90% sulfuric acid and 10% hydrogen peroxide) to remove standard resist layers, i.e., 3612, 955 or PMMA, from clean category samples after wet etching, non-polymer forming dry etching and re-working of lithography layers.
Time of execution: approximately 40 minutes
time = 20:00 minutes
temperature = 120°C
chemical = 9:1 H2SO4:H2O2
NOTE: Use your own designated Glass etch beaker to prevent contaminating your wafers. If your wafers are already contaminated you may use the beakers on holders at the wbgeneral (all of them are contaminated). Once you use a contaminated beaker -- your wafers must be considered contaminated and are restricted as to what equipment they may use.