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Resist Strip for Nonmetal Wafers- dry/wet (clean)

This process module describes resist stripping using wet chemistry for wafers that have never had metal layers. It would be used to remove hardened or damaged resist after ion implantation or plasma etching esp. plasma chemistry producing polymer on the surface of the wafers.

RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS OR PLASMA POLYMER FOR NON-METAL WAFERS

Purpose:  Oftentimes after a heavy dose or high energy implant step the resist is damaged enough to require more than the usual piranha step.  An oxygen plasma may ‘soften’ or altogether remove the resist.  In extreme cases this two step process may be repeated.

This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.

Equipment:  gasonics

Time of Execution:  approximately 3 minutes per wafer

Step 1 Summary:

time = 90 seconds

Program name = 013

 

Followed by;

 

Equipment wbnonmetal

Time of execution: approximately 40 minutes

Step 2 Summary:

time = 20:00 minutes

temperature = 120°C

chemical = 9:1 H2SO4:H2O2

dump rinse

spin dry

 

Repeat Gasonics step and Sulfuric Peroxide Strip if necessary.

Detailed Procedure:  Please refer to the operating instructions for gasonics and wbnonmetal.

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