Resist Strip for Nonmetal Wafers- dry/wet (clean)
RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS OR PLASMA POLYMER FOR NON-METAL WAFERS
Purpose: Oftentimes after a heavy dose or high energy implant step the resist is damaged enough to require more than the usual piranha step. An oxygen plasma may ‘soften’ or altogether remove the resist. In extreme cases this two step process may be repeated.
This module may also be used to strip polymer and resist off the surface of the wafer after plasma etching where the chemistry produces polymer.
Time of Execution: approximately 3 minutes per wafer
Step 1 Summary:
time = 90 seconds
Program name = 013
Time of execution: approximately 40 minutes
Step 2 Summary:
time = 20:00 minutes
temperature = 120°C
chemical = 9:1 H2SO4:H2O2
Repeat Gasonics step and Sulfuric Peroxide Strip if necessary.