Resist Strip for Nonmetal Wafers- wet (clean)
RESIST STRIP FOR NON-METAL WAFERS
Purpose: Use of piranha (90% sulfuric acid and 10% hydrogen peroxide) to remove standard resist layers, i.e., 3612, 955 or PMMA, from clean category samples after wet etching, non-polymer forming dry etching and re-working of lithography layers.
Time of execution: approximately 40 minutes
time = 20:00 minutes
temperature = 120°C
chemical = 9:1 H2SO4:H2O2
Detailed Procedure: please see operating instructions for wbnonmetal