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• Home
• Equipment
  • Equipment Summary
  • Beam Tools
    • Hummer V Sputter Coater: hummer
    • Raith 150 Ebeam Writer: RAITH
      • Raith FBMS Upgrade
      • Raith FBMS Upgrade -2
    • Hitachi S4160 SEM: sem4160
  • Optical Photolithography Overview
    • Resist Coat, Tool Summary
      • Headway
      • Laurell
      • SVG Coat Tracks 1&2
      • EV101 Spray coater Information
    • Exposure Tool Summary
      • ASML
      • KarlSuss Aligner
      • EV Group Contact Aligner
    • Develop Summary
      • SVG Developer
    • Oven Bake & Cure Summary
      • YES Oven
      • Blue M Oven
      • Oven 110C
      • Oven 90C
      • Singe Oven 150C
  • Chemical Vapor Deposition
    • Low Pressure CVD
      • Teos2
      • ThermcoNitride
      • ThermcoLTO
      • TylanNitride
      • TylanSiGe
      • TylanBPSG
      • LPCVD tests
      • Thermcopoly
      • Thermcopoly2
      • CVD-Nanotube
      • Aixtron-Graphene
    • PECVD
      • PlasmaTherm Versaline HDPCVD
      • PlasmaTherm CCP-Dep
      • STS PECVD Tool
    • ALD
      • Savannah
      • Fiji1
      • Fiji2
      • Fiji3
      • MVD
      • Available Films at SNF
      • EE412 Final Reports
      • ALD Tutorials
      • ALD Images
      • Savannah semi-clean contamination category policy
    • Epi2 (Chamber A)
    • Epi papers/images
      • Sidewall epitaxial piezoresistor process and characterisation for in-plane force sensing applications
      • Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
      • Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality
      • Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection
      • Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si
      • High-efficiency metal–semiconductor–metal photodetectors on heteroepitaxially grown Ge on Si
      • Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing
      • Low-Temperature, LPCVD and Solid Phase Crystallization of Silicon–Germanium Films
      • Effect of Isochronal Hydrogen Annealing on Surface Roughness and Threading Dislocation Density of Epitaxial Ge on Si
      • Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p Junction Diode
      • Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p-Junction Diode
      • High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
      • High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration
      • Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si
      • Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation
    • Epi2B (Chamber B)
    • MOCVD
      • aix200
      • aix-ccs
  • Metalization & Sputtering
    • Evaporation
      • IntlVac Nanochrome I Evaporator, intlvac_evap, Automatic
      • Innotec ES26C E-Beam Evaporator
      • AJA-evaporator
    • Sputtering
      • Metalica Sputter System
      • Sputtering Papers
      • Intlvac NanoChrome 1 Sputter
      • Lesker-Sputter
  • Dry Etching
    • General Information on Plasma Etching
      • Overview of Etchers Available at SNF
      • How to Attach Samples to Carrier Wafers for Plasma Etching or Deposition
      • Etch Equipment Trobleshooting Guide
    • AMT 8100 Plasma Etcher, amtetcher (semi-clean)
      • AMT 8100 Plasma Etcher, amtetcher
      • Amtetcher Quick Start
      • Standard Recipes and Etch Rates
      • NEW! Recent qualification Results
      • Non-Standard and Lesser Used Recipes
      • 200 nm Structures using Amtetcher
      • Fine Example of RF arcing
    • Drytek2 Model 100, drytek2 (semiclean)
      • Drytek2 Model 100, drytek2
      • Drytek2 Quick Start Instructions
      • Standard Recipes and Etch Rates for Drytek2
      • NEW! Recent Process qualifications
      • Procedure for Balancing RF Power to Electrodes
    • Drytek4 Model 100 (modified), drytek4 (contaminated)
      • Drytek4 Model 100 (modified), drytek4
      • Etch Rates and Selectivities
    • Gasonics Aura Plasma Asher, gasonics (semi-clean)
      • Gasonics Plasma Asher
      • Process Qualification Procedures
    • Lam Research 9400 TCP Poly Etcher, lampoly (clean)
      • Lampoly Operating Procedure
      • Clarycon Website
      • Etch Profiles
      • Isotropic silicon etching
      • Semiclean Wafers on lampoly/p5000etch Poly
      • Anistropic Etching of Single-Crystal Silicon
      • Images
    • Matrix Plasma Asher, matrix (contaminated)
      • Matrix Plasma Asher, matrix
      • Temporary Quick Start for Matrix
      • Cr in matrix
    • MRC Model 55 RIE, mrc (contaminated)
      • MRC Model 55 RIE, mrc
      • Quick Start for MRC
      • Selected Recipes
      • Qual results
      • Using the Pirani Gauge on the MRC
    • Applied Materials Precision 5000 Etcher, p5000etch (semi-clean)
      • Applied Materials Precision 5000 Etcher, p5000etch
      • Quick Start for P5000etch
      • NEW! Recent Process Qualifications
      • Endpoint Wavelengths
    • Plasma Quest ECR Etcher, pquest (contaminated)
      • Plasma Quest ECR Etcher, pquest
      • PQuest Chemistry Calendar
    • STS Deep RIE Etcher, stsetch (semi-clean)
      • STS Deep RIE Etcher, stsetch
      • Quick Start for Stsetch
      • SEM Images of Selected Process Qualification Wafers
      • Description of Wafer Holder
      • Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher
      • Effect of wafer holder on etch profiles & grass
      • STS Deep RIE Etcher- Studies
    • STS HRM Deep RIE Etcher, stsetch2 (semi-clean)
      • STS HRM Deep RIE Etcher, stsetch2
      • STS II Response Table
      • Throttle vs Pressure for SF6 and C4F8
      • STSetch2 etch profile
      • How to Improve Etch Profiles Using stsetch2
      • Characterization
      • Crystalbond Procedure
    • Xactix
      • Xactix: A XeF2 dry, chemical etcher
    • Oxford III-V Etcher
      • Operating Instructions- Ox-35
    • Plasmatherm Etchers (pt-dse, pt-ox and pt-mtl)
      • Plasma Therm Etchers - General Operating Procedure
      • PlasmaTherm Metal Etcher (pt-mtl)
      • PlasmaTherm Oxide Etcher (pt-ox)
      • PlasmaTherm Deep Silicon Etcher (pt-dse)
      • PlasmaTherm - Creating/ Editing Recipes
      • Processing Transparent Substrates in the VersaLine Systems
      • 6" Conversion Protocol
      • Images
      • Endpoint
    • SPTS uetch vapor etch system, uetch
      • SPTS uetch vapor etch system
  • Annealing, Oxidation & Doping
    • Furnaces, oxidation and annealing (clean, semi-clean and contaminated)
      • Thermco Oxidation and Annealing Furnaces, Thermco1 - 4
      • Furnaces, Forming Gas Anneal (FGA), tylanfga and fga2
      • Oxide Thickness Calculators
    • Rapid Thermal Annealing
      • All-Win 610 Rapid Thermal Process Systems
    • Doping
      • POCl3 and BBr3 Predep Furnaces- tylan5 and tylan6
  • Wet Benches Summary
    • Wet Bench Clean
      • Wet Bench Clean-1 and 2 (former wbdiff)
      • Wet Bench Clean Checklist
      • new SC1
    • Wet Bench Nonmetal
      • Wet Bench Nonmetal, wbnonmetal
    • Wet Bench Decon and Clean-3
      • wbdecon and wbclean-3
    • Wet Bench Metal
      • Wet Bench Metal, wbmetal
    • Wet Bench Nitride
      • Wet Bench Nitride, wbnitride
    • Wet Bench Flexcorr-3 and -4
      • Wet Bench Flexcorr-3 and -4, wbflexcorr-3 and -4
      • Wet Bench Flexcorr Checklist
    • Wet Bench wbflexcorr-1 and wbflexcorr-2
      • Wet Bench wbflexcorr-1 and -2
    • Wet Bench Germanium
      • Wet Bench Germanium, wbgen2
    • Wet Bench Solvent
      • Wet Bench Solvent, wbsolvent
      • Lithography Solvent Bench, lithosolv
    • Miscellaneous Photoresist Wet Bench
      • Miscellaneous Photoresist Wet Bench, wbmiscres
    • CPD
      • CPD Critical Point Dryer Tousimis 915B, cpd
      • Tousimis Company Website
    • Wet Bench Operating Instructions
    • Additional Process Info
    • Wet Bench Operating Instructions WAFAB
  • Wafer Bonding, Sawing & Polishing
    • GnP POLI-400L: cmp
      • CMP
    • EV Group Wafer Bonder: evbond
      • Electronic Vision 501 Bonder, evbond
    • Suss Wafer Bonder: ksbond
    • Benchtop Muffle Furnace: thermolyne
    • K&S 775 Wafer Dicing Saw: wafersaw
      • K&S Dicing Blades
      • wafersaw Operation
    • DISCO Wafer Saw
      • DISCO Wafersaw Operating Procedure (under construction)
      • Images
  • Characterization & Testing Summary
    • Cornell's Test Equipment Tutorial
    • AFM2
      • AFM2, afm2
      • 1-on-1 training
    • Alphastep 500
      • Alphastep 500
      • Alphastep 500 User Manual, Tencor Instruments
    • Flexus 2320
      • Flexus 2320 Stress Gage, stresstest
      • Tencor Flexus 2320 Manual
    • Nanospec
      • Nanospec 010-180, nanospec
      • Nanometrics Company Website
      • Nanospec 210XP, nanospec2
    • Prometrix
      • Prometrix OmniMap RS35c, prometrix
      • 49 point wafer mapping
      • Matlab File: 49 point wafer mapping
    • Tencor P2
      • Tencor P2, p2
    • Woollam M2000
      • Woollam M2000 Spectroscopic Ellipsometer, woollam
      • Woollam M2000 Company Website
      • Woollam Wafer Mapping Instructions (VASE Manager Program)
    • Microscope
      • Optical Microscopy for Labmembers Working at SNF
    • Sensofar S-neox
      • Sensofar S-neox
  • Lab Maps
    • Equipment Locations (PDF)
    • Emergency Map (gif)
    • Emergency Map (PDF)
  • Nano Structures Integration Lab (nSiL)
    • PDS 2010 LABCOTER™ 2 Parylene Deposition System
      • PDS 2010 LABCOTER™ 2 Parylene Deposition System
      • Images
      • Parylene Properties Reference
      • PDS 2010 LABCOTER™ 2 Parylene Deposition System Operator’s Manual
      • Parylene Coater Spec
    • Glovebox
      • nSIL Glovebox – Training and Operating Manual
• Process
  • Process Modules
    • Photolithography
      • Standard Resists at SNF
      • EBeam Resists at SNF
      • Lift Off Procedures
      • SU-8 Procedures
      • Polyimide Procedures
      • Photoresist Exposure Time Table
      • Resist Modules
      • Photolithography Qualifications
      • Common photolithography problems at SNF
      • Maskmaking
    • Etching
      • Wet Etching
      • Dry Etching
      • Etch Rates for Various Etchants Wet and Dry
      • Etch Rates for Various Etchants Wet and Dry
    • Oxidation Furnaces- grown oxides
      • Oxide Thickness Calculators
    • Chemical Vapor Deposition- deposited thin films
    • Cleaning and Stripping of Substrates, Labware and Tweezers
      • Diffusion Cleaning at SNF
      • Photoresist Stripping
      • Tweezers Cleaning
      • Cleaning of Labware
    • EE410 Device
    • Ebeam Resists
      • Ma-N 2403
      • E-Spacer 300Z
      • 2% 950K PMMA
  • Runsheets
    • Basic Processing at SNF Runsheet
    • Runsheets for Etch Qualification Test Wafers
      • Guide to Wafer Production for Etch Tool and Process Qualification Wafers
      • Runsheet for 100nm Thermal Oxidation Test Wafers
      • Runsheet for 1um LTO Test Wafers
    • EE410 Runsheet 2007-8
    • EE410 CMOS Runsheet Winter 2015
  • Process Resources
    • TOx Thickness Calculator
    • Tylan Monitoring
    • Gage Readings
    • USB on Sunrays
  • Other Resources
    • Shadow Masks
  • Community Service Projects
    • About Community Service
    • Polysilicon characterization
      • Low Stress PolySi -Exptl Plan
      • Low Stress PolySi Characterization Report
    • EE410 Redesign
      • EE410 Redesign Summary
    • Cleanliness & Contamination
      • TXRF analysis of gold-contaminated wafers
    • PEB Characterization
    • drytek4 Characterization
    • STSetch2 Characterizations
      • SOI etch-Khuri-Yakub Group
      • High Aspect Ratio/Narrow Trenches
    • ALD HfO2 characterization for RRAM
      • ALD Oxide Characterization Proposal
    • MVD- Polyimide Development
      • MVD Polyimide Community Service Proposal
      • EE412 Fall 2014 Report
      • MVD Polyimide EE412 proposal
    • Carbon Nanotube Furnace- Recipe development and characterization
      • CNT Furnace Recipe Development Proposal
    • MOCVD process development and sample characterization
      • PL mapping of III-nitrides
      • AlGaN/GaN HEMT structure on Si.pdf
  • EE412
    • EE412 Projects
    • Lecture Notes
      • Principles of Atomic Layer Deposition
    • Fall '10
      • Presentations
      • Final Reports
    • Winter '11
      • Presentations
      • Final Reports
    • Spring '11
      • Interim Reports
      • Final Report
    • Fall '11
      • Fiji-Proposal
      • Fiji-Week3
      • W-etching-Week3
      • AngledEvap-Week3
      • AngledEvap-Week4
      • W-Etching-Week4
      • Final report for the project on plasma ALD deposition in the Fiji
      • Final presentation for angled evaporation project
    • Spring '14
      • Presentations
      • Final Reports
    • Fall '14
      • Final Presentations
      • Final Reports
    • Spring '15
      • Final Presentations
      • Final Reports
    • Fall '15
      • Final Presentations
      • Final Reports
  • PDMS processing at SNF
    • PDMS reference papers
      • Elastomer-supported cold welding for room temperature wafer-level bonding
      • Thin PDMS Films Using Long Spin Times or Tert-Butyl Alcohol as a Solvent
      • Mechanical characterization of bulk Sylgard 184 for microfluidics and microengineering
      • Characterization study of bonded and unbonded polydimethylsiloxane aimed for bio-microelectromechanical systems-related applications
      • Enhancement of the thermo-mechanical properties of PDMS molds for the hot embossing of PMMA microfluidic devices
      • Solvent Compatibility of Poly(dimethylsiloxane)-Based Microfluidic Devices
    • PDMS data sheets and MSDS
      • Sylgard 182 Silicone Elastomer product datasheet
      • Sylgard 184 Silicone Elastomer product datasheet
      • Sylgard 182 MSDS
      • Sylgard 184 MSDS
    • A Guide to Working with PDMS at SNF
  • MOCVD Workshop
    • MOCVD_Workshop_Presentation_Prof. Debbie Senesky
    • MOCVD Workshop Presentation-Nanometrics
    • MOCVD Workshop Presentation-Lehighton
    • MOCVD Workshop Presentation-Dr. Xiaoqing Xu
• Materials/Chemicals
  • Contamination Groups at SNF
    • Contamination Groups for Controlling Process Flow Materials
  • Applications Notes
    • SPR 955 CM i-line Resist
  • MSDS-Standard Chemicals
    • SDS (MSDS), files only
      • Acetone
      • Ammonium hydroxide
      • 15% Arsine 85% Nitrogen
      • Argon
      • Boron Trichloride
      • Boron Trifluoride
      • Buffered Oxide Etch
      • Carbon Dioxide (Matheson)
      • Carbon Dioxide (Praxair)
      • Chlorine
      • Chlorine
      • Disilane
      • Dichlorosilane
      • EC Solvent 13
      • Ethylene Glycol
      • Halocarbon 14
      • Halocarbon 23
      • Halocarbon 22
      • Halocarbon 116
      • Hydrofluoric Acid
      • Hydrofluoric Dip
      • Helium
      • Hydrochloric Acid 37%
      • Hydrogen Peroxide 3%
      • Hydrogen Bromide
      • Aluminum (Al) Etchant, discontinued as of 2/14/14
      • HMDS
      • Isopropyl Alcohol
      • LDD 26W Developer
      • LOL 2000
      • 1-methyl-2-pyrrolidinone
      • Methane
      • MF-26A Developer
      • Methyl Alcohol
      • MF-322 Developer
      • MF-319 Developer
      • Methyl Isobutyl Ketone
      • MF-CD-26 Developer
      • Nitrogen Trifluoride
      • Nitrogen
      • Gold (Au) Etchant
      • Nitric Acid 70%
      • Nitrous Oxide (Air Products)
      • Nitrous Oxide (Praxair)
      • Phosphoric Acid
      • Boron Tribromide (BBr3)
      • Potassium Hydroxide
      • PRS 1000
      • Remover 1165
      • Silane (Air Products)
      • Silane (Praxair)
      • Silicon Tetrachloride
      • SU-8 Developer
      • SPR 220-7.0 Positive Photoresist
      • SPR 955CM-0.7 Positive Photoresist
      • SPR 220-3.0 Positive Photoresist
      • SPR 3617M Photoresist
      • Sulfur Hexafluoride (Praxair)
      • SPR 3612 Positive Photoresist
      • Phosphorous Oxychloride (POCl)
      • Sulfur Hexafluoride (Air Products)
      • Sulfuric Acid
      • UVN 30-0.8 DUV Photoresist
      • Xylenes
      • 950 PMMA Series
      • Praxair Online MSDS Library
      • Ammonia
      • Ultrasol 2EX MSDS
      • Ultrasol S10 MSDS
      • A-174 Silane
      • MICRO-90 CONCENTRATED CLEANING SOLUTION
      • Parylene Dimer DPX-C
    • SDS and information: Liquids
      • Acetic acid (CH3COOH)
      • Acetone (CH3COCH3)
      • Aluminum (Al) Etchant
      • Ammonium Hydroxide (NH4OH)
      • Buffered Oxide Etch
      • Chromium (Cr) etchant 1020AC from Transene
      • EC Solvent 13
      • Ethylene Glycol ((CHOH)2)
      • Gold (Au) Etchant
      • HDMS (Hexamethyldisilazane)
      • Hydrofluoric acid (HF)
      • Hydrofluoric Dip (HF)
      • Hydrogen Peroxide (H2O2)
      • Isopropyl alcohol
      • 1-methyl-2-pyrrolidinone
      • Methyl Alcohol (CH3OH)
      • Methyl Isobutyl Ketone (MIBK)
      • MF-26A Developer
      • MF-319 Developer
      • MF-322 Developer
      • MF-CD-26 Developer
      • Nitric Acid (HNO3)
      • Phosphoric Acid (H3PO4)
      • Potassium Hydroxide (KOH)
      • PRS-1000
      • Remover 1165
      • SRS-100
      • SU-8 Developer
      • Sulfuric Acid (H2SO4)
      • SPR 220-3.0 Positive Photoresist
      • SPR 220-7.0 Positive Photoresist
      • SPR 3612 Positive Photoresist
      • SPR 3617M Photoresist
      • SPR 955CM-0.7 Positive Photoresist
      • Tetramethylammonium Hydroxide (TMAH)
      • UVN 30-0.8 DUV Photoresist
      • Xylenes
      • 950 PMMA Series
    • SDS (MSDS) and information: Gases
      • Nitrogen Trifluoride (NF3)
      • Chlorine(Cl2)
      • Hydrogen Bromide (HBr)
      • 100ppm Arsine in Hydrogen (100 ppm AsH3/H2)
      • Germane(GeH4)
      • 1% Phosphine/Hydrogen (1%PH3/H2)
      • Hydrogen Chloride (HCl)
      • 15% Phosphine in Silane (15% PH3/SiH4)
      • 100ppm diborane in hydrogen (100ppm B2H6/H2)
      • 1% diborane in hydrogen (1% B2H6/H2)
      • Nitrous Oxide (N2O)
      • Ammonia (NH3)
      • Dichlorosilane(SiH2Cl2)
      • 5% Diborane in Hydrogen (5% B2H6/H2)
      • 10% Phosphine in hydrogen (10% PH3/H2)
      • 80% Methane in Argon (80% CH4/Ar)
      • 2% Boron Trichloride in Argon (2% BCl3/Ar)
      • 2% Silane in Nitrogen (2%SiH4/H2)
      • Silane (SiH4)
      • Methane (CH4)
      • Disilane (Si2H6)
      • 4% Hydrogen in Nitrogen (4% H2/N2)
      • Nitrogen (N2)
      • 15% Arsine in Nitrogen (15% AsH3/N2)
      • Argon
      • Boron Trichloride (BCl3)
      • Boron Trifluoride (BF3)
      • Carbon Dioxide (CO2)
      • Chlorine (Cl2)
      • Halocarbon 14
      • Halocarbon 23
      • Halocarbon 22
      • Halocarbon 116
      • Helium (He)
      • Silicon Tetrachloride (SiCl4)
      • Sulfur Hexafluoride (SF6)
    • MSDS ALD Precursors
      • TrimethylAluminum
      • Tetrakis(dimethylamido)titanium(IV) (TDMA-Ti) MSDS
      • Bis(ter-butylimino)bis(dimethylamino)tungsten(VI) MSDS
      • Tetrakis(dimethylamido)hafnium(IV) MSDS
      • Tungsten Hexacarbonyl W(CO)6
      • Tetrakis(dimethylamido)zirconium(IV) (TDMA-Zr) MSDS
      • Tetrakis(ethylmethylamido)zirconium(IV) (TEMA-Zr) MSDS
      • Tris(diethylamido)(tert-butylimido)tantalum(V)
      • Tris[dimethylamino]Silane (3DMAS) MSDS
      • (3-Aminopropyl)triethoxysilane (APTES) MSDS
      • Tris(tert-botoxy)silanol MSDS
      • Trimethyl(methylcyclopentadienyl)platinum(IV) MSDS
      • Bis(cyclopentadienyl)nickel (nickelocene) MSDS
      • Bis(ethylcyclopentadienyl)ruthenium(II) MSDS
      • Diethylzinc (DEZ) MSDS
      • Tris[N,N-bis(trimethylsilyl)amide]yttrium MSDS
      • Cyclopentadienyl-indium MSDS
      • Tetrakis(dimethylamino)tin(IV) TDMA-Sn MSDS
      • Tris(cyclopentadienyl)yttrium (3CpY) MSDS
      • Tetramethyl-Tin
      • Trimethylgallium
      • Bis(1,2,4-triteriarybutylcyclopentadienyl)-strontium
      • Bis(ethylcyclopentadienyl)nickel(II) MSDS
      • Ferrocene
      • Titanium (IV) Isopropoxide (TTIP) MSDS
      • Bis(n-propyltetramethycyclopentadienyl)barium MSDS
      • Bis(pentamethylcyclopentadienyl)barium, 1,2-dimethoxyethane adduct MSDS
      • Bis(cyclopentadienyl)cobalt (II) MSDS
      • Fe amidinate MSDS (Accudep Iron)
      • Pentakis(dimethylamino)tantalum(V)
      • MSDS Nickel bis(N,N'- ditertialbutylacetamidinate) AKA Dow Accudep-Ni
      • MSDS- Molybdenum hexacarbonyl
    • Stanford MSDS Page
  • Process or Materials Review Requests (PROM) and Form
    • Process or Materials Review (PROM) Form
    • 2014 PROM Requests
      • 20140204 H. Kim- Kateeva (EPR-174)
      • 20140221 T. English- Crystal Bond 509 in Xactix (XeFe2) Etcher
      • 20140221 K. Harris- Clean Processing of Aluminum post CMP
      • 20140226 X. Bai- Encapsulated 1cm2 GaAs substrate annealing in RTA
      • 20140307 L. Zhu Poly-Si deposition on Mo/Si substrate in ThermcoPoly2 (LPCVD)
      • 20140131 D. Lu- SrTiO3 processing in CPD
      • 2014031714 W. Liu- Etching Polyacrylonitrile- lithium perchlorate membrane with Au mask
      • 20140207 K. Todd- Mercury Cadmium Telluride on a Zinc Cadmium Telluride substrate in lithography
      • 20140228 M. Hou- Li2CO3 ALD
      • 20140219 I. Narkeviciute- Ta sputter target for Metallica
      • 20140211 A. Benefante- Spin coat graphene onto substrates
      • 20140205 P. Wei- Request for use of new Poly Imide (PI-2611 and VM-651) in SNF
      • 20140121 A. Ceballos- Process flow from PT-DSE (contaminated) to epi2 (clean)
      • 20140123 J. Kruger- SOD P507 for Ge(Sn) epi on Si
      • 20140410 T. Lin- Request for Zinc Phosphorus Dopant Coating
      • 20140529 T. Lu- Request for Use of Glass Wafer Cleaning Detergent
      • 20140602 F. Toufexis- Lanthanum Hexaboride (LaB6) and Cerium Hexaboride (CeB6) Sputtering in Metalica
      • 20140725 A. Gupta- Etching T12B SOG in PT-OX
      • 20140725 A. Gupta- Etching T12 SOG in PT-MTL
      • 20140725 A. Gupta- Etching FOx-22 SOG in PT-Ox
      • 20140725 A. Gupta- Etching FOx spin on glass in PT-MTL
      • 20140725 A. Gupta- Etching Cytop in PT-Ox etcher
      • 20140725 A. Gupta- Etching Ctyop in PT-MTL etcher
      • 20140515 K. Dowling- Use of Copper Mask in SF6/O2 chemistry in PT MTL
      • 20140624 W. Kao- GaAs processing and citric acid introduction
      • 20140715 K. Harrison- Use of Crystal Bond 509 in Lampoly etcher
      • 20140715 K. Harrison- Use of Crystal Bond 555 in Lampoly
      • 20140507 M. Shulaker- Resist in HF vapor etcher
      • 20140506 J. Sohn- CLK-820
      • 20140813 J. Briggs- Ionic Liquid for Electrolyte Transistor
      • 20140812 J. Katz- PGMEA use in SNF.
      • 20140812 J. Katz- PS-PMMA use in SNF
      • 20140918 J. Katz- PS-OH use in SNF
      • 20140922 J. Provine Dichlorosilane processing on Fiji1
      • 20141007 K. Smithe- Y processing at wbflexcorr
      • 20140829 J. Kruger- UV Cured Adhesive use
      • 20141007 J. Park- InAs on GaAs in Fiji2 and Savannah
      • 20140825 A. Gupta- CCP PECVD on T12B SOG
      • 20141010 A. Gupta- CCP PECVD on FOx-22
      • 20141010 A. Gupta- CCP PECVD on CYTOP 809M SOG
      • 20141013 T. English- Polyimide MLD
      • 20141015 L. Petti- PI2611 and PI2610 Use in SNF
      • 20141021 J. Kreikebaum- Nb etch in PT Metal
      • 20141024 A. El-Ghazaly- Slightly Elevated Temperature Processing of HF
      • 20141031 J. Park- ALD film thickness 150nm
      • 20141101 Sedigh, M.- HMDS for Cypress HX3 Lead Frame
      • 20141105 A. Rider- Metal CMP
      • 20141105 A. Ceballos- PT-DSE to CLEAN process flow
      • 20141106 D. Nam- Request for 150nm ALD film
      • 20141106 L. Petti- Polymers 575771 and 593052 use in SNF
      • 20141111 S. Zappe- use of dry film photoresist (MX5015) with developer (0.75wt% potassium carbonate) and remover (EKC-162)
      • 20141119 Y. Li- Constantan (0.55Cu-0.45Ni) sputtering target for Metalica
      • 20141118 P. Ramesh- Contamination Study of Zinc Oxide Anneal
      • 20141204 T. English- Diamine (DAH) Precursor for MLD of Polymers
    • 2014 PROM REQUESTS SUMMARY TABLE
    • 2013 PROM REQUESTS SUMMARY TABLE
    • 2013 PROM Requests
      • 20131204 T. Larsen- PCB and Ceramic Adhesive
      • 21031212 M. Kerby- Bring in 4L of Microchem Remover PG
      • 20131212 J. Briggs- MgO Substrate in Fiji2
      • 20131206 EE342 Piezoelectric AlN/Mo stack
      • 20131204 Y. Chen- Potassium Dichromate Solution (K2Cr2O7)
      • 20131121 H. Kim- Epoxy Permanent Resist Version 168
      • 20131121 H. Kim- Epoxy Permanent Resist Version 167
      • 20131108 J.Wu- CdS in Fiji2
      • 20131024 J. Wu- BiVO4 in Fiji2
      • 20130918 J. Kruger- Use of Santovac5 for thermal contact in Plasma Etch (gold systems)
    • 2015 PROM Requests
      • 20150128 J. Katz- Use of toluene at Headway
      • 20150207 J. Hill- Lampoly HBr/Cl2/O2 etching of silicon on lithium niobiate
      • 20150213 L. Lee- Annealing Thulium Doped Samples
      • 20150202 K. Harrison- Contamination Study of Semi-Clean SiGe Etch in LAMpoly
      • 20150213 K. Leschkies- SiO2 films on Si wafers soaked in IPA solvent
      • 20150218 J. Katz- Ladder Polymers and Solvent
      • 20150218 P. Kratz- Al2O3 ALD on K(Co)-doped BaFe2As2
      • 20150219 W. Park- Ultrasol A201A CMP Slurry use
      • 20150220 M. Winterkorn- PbS film in Fiji3
      • 20150223 A. Holm- HF wet etch to peel off PMMA film embedding graphene composites
      • 20150316 K. Harrison- Process flow for etching Silicon Germanium on contaminated wafers with aluminum in LAMpoly (clean)
      • 20150319 K. Todd- Wafers from outside fab to process in SNF clean tools
      • 20150325 H. Xu- Use of AZ 125nxt Photoresist
      • 20150330 J. Hill- Lampoly HBr/Cl2/O2 etching of silicon on lithium niobate
      • 20150403 M. Hanna- OSCoR SL Stripper 200
      • 20150413 M. Mleczko- Al2O3 ALD on TMD in MVD Savannah
      • 20150414 A. Gupta- Negative Tone Siloxane Resist
      • 20150423 P. Landreman- Ge2Sb2Te6 Sputter Target for Metallica
      • 20150323 M. Simon- AZ1518 Photoresist and AZ300MIF Developer in SNF
      • 20150515 M. Simon- Use of Aquapel in SNF
      • 20150520 D. Gray- Request to deposit amorphous TiO2 on SrTiO3 and LiNbO3 substrates in intlvac-sputter
      • 20150527 L. Lee- Processing of Thulium Doped Samples
      • 20150601 C. Chapin- 3:1 Sulfuric and phosphoric acid heated to 200C
      • 20150602 S. Isaacson- Hybrid nanocomposite synthesis with polyimides
      • 20150609 P. Gross- Nafion dispersion D1021 in SNF
      • 20150609 M. Simon- Request to spin Teflon on Headway
      • 20150609 A. Benfante- ALD on thermally reduced graphene oxide in Fiji2
      • 20150619 M. Essingmann- Request to use Langatate material into the SNF
      • 20150623 J. Kruger- Use of MasterBond UV15LV
      • 20150630 M. Radulaski- Hot wet etch for SiC
      • 20150703 B. Sadat- Request to enter material required for spin coating PVDF films in SNF
      • 20150720 S. Zappe- Use of low-outgassing silicone glue in metal evaporation system
      • 20150714 J. Torgersen- Request to use CO on Fiji2
      • 20150723 H. Deng- Deposit 75nm Al2O3 in Savannah
      • 20150728 J. Witmer- Backside Removal of SOI-on-LiNbO3 in PT-DSE
      • 20150813 S. Doshay- HSQ Bonding in evbonder
      • 20150813 K. Zhang- Post wafer dicing pieces in lampoly
      • 20150817 S. Stanwyck- HgCdTe/HgTe/HgCdTe quantum wells on GaAs substrate
      • 20150817 M. Fardy- Ferritin from Equine Spleen
      • 20150831 P. Pavani- Exnodes PROM
      • 20150902 P. Chakthranont- ITO Sputtering Target for Metallica
      • 20150903 J. Xie-LixAlyOz ALD
      • 20150914 J. Provine- CMP of PbS
      • 20150923 B. Allen- Modified Process on STS
      • 20150923 Y. Lee- FFEM LCD Resist and Developer for Lithography
      • 20150923 Y. Lee- Microchem PRL for Lithography
      • 20150923 Y. Lee- Use of Toray Light Shielding Material for Lithography
      • 20150930 S. Doshay- Etching of contaminated pieces in Lampoly
      • 20151111 J. Chesavage- Use of unopened old wafers (circa 2009)
      • 20151119 S. Achira- Use of new SrO Precursor in Fiji2
      • 20151120 S. Bohaichuk- VO2 CNT device process flow
    • 2015 PROM REQUESTS SUMMARY TABLE
    • 2016 PROM REQUESTS SUMMARY TABLE
    • 2016 PROM Requests
      • 20160119 G. Naik- Request to allow using attachments on Woollam ellipsometer that enable characterization of liquid samples
      • 20160202 H. Kim- Polyimide in Fiji2
      • 20160304 D. Menche- H2 Anneal in CVD Nano Tube Tool of Silicon for Smoothing Sidewall Scallops Formed During Bosch Process Deep Silicon Etch
      • 20160314 X. Lei- XeF2 etching of Si pillars implanted in retina fixed in resin
      • 20160329 T. Huang- Bringing Transene TE-100 into SNF
• Safety/Policies
  • Safety Orientation
    • Intro to SNF: Video
    • Safety at SNF: Video
    • Gowning: Video
  • Policies
    • Memo: Coral enable policies ....
  • Stanford EH&S
  • Stanford EH&S Chemical Safety Database
  • Stanford University - Utilities Services
    • Stanford University - Utilities Services
• Training
  • Training Calendar
  • About Equipment Training
  • Shadowing Form
  • Training Videos
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  • Wafer Handling Script
• Links
  • Stanford Nano Shared Facilities (SNSF)
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