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ASML Target Marks using Drytek2

The Drytek 100 tool may be used to etch the targets. Drytek2 is a semi-clean and contaminated system that can etch 4 clean/semi-clean wafers or 2 contaminated wafers at a time. The six electrode stack is divided into clean/semi-clean (1-4) and contaminated (5&6) positions.

Purpose:

 To etch 120nm zero or global alignment marks in Si in order that subsequent mask layers may be aligned.  Limited to four inch wafers.  Please be aware that if you use drytek1 (contaminated) your wafers will be considered contaminated.  In drytek2 you may etch wafers sizes from 6 inch to pieces.

Equipment:

 drytek2

 

Time of Execution:

Approx. 20 minutes

 

 

Step Summary:

drytek2

Recipe; poly etch- drytek2

Time: 30 seconds

 

Resist strip for wafers etched on the contaminated electrodes: Photoresist Strip for Contaminated Wafers

- wet

Resist strip for wafers etch on the clean/semi-clean electrodes: Photoresist Strip for Nonmetal Wafers- wet

 

 

 

Detailed Procedure:

Please see drytek2

 

 

 

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