ASML Target Marks using Drytek2
To etch 120nm zero or global alignment marks in Si in order that subsequent mask layers may be aligned. Limited to four inch wafers. Please be aware that if you use drytek1 (contaminated) your wafers will be considered contaminated. In drytek2 you may etch wafers sizes from 6 inch to pieces.
Time of Execution:
Approx. 20 minutes
Recipe; poly etch- drytek2
Time: 30 seconds
Resist strip for wafers etched on the contaminated electrodes: Photoresist Strip for Contaminated Wafers Photoresist Strip for Nonmetal Wafers- wet
Detailed Procedure:Please see drytek2