ASML Target Marks using P5000etch
To etch 120nm zero or global alignment marks in Si in order that subsequent mask layers may be aligned. Limited to four inch wafers.
Time of Execution:
Approx. 20 minutes per 8 wafers
Chamber: CH. C (Si etch)
Recipe: CH C POLY ETCH
Resist strip: Resist Strip for Nonmetal Wafers- wet
Detailed Procedure:Please see p5000etch