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Summary of Oxide Etch Processes in SNF

The following information is provided to SNF users to aid in the determination of appropriate equipment for their etching needs. Standard or typical programs and results are given. The user may want to tailor the programs to fit their specific process. Etch rates and selectivities are given as a starting point only and should not be considered to be current. It is highly recommended that users establish the etch rates for their work by the use of test wafers as close in material and masking pattern as possible to the device wafers to be etched.

 

Tool
Etch Program
Cleanliness Level
Endpoint detection?
Etch Rate
Ox
Etch Rate
PR
Selectivity
Ox : PR
Amtetcher
Program #3
Program #4
 Clean and
Semi-clean
 no  35nm
29nm
 11nm
39nm
3 : 1
0.7 : 1
 P5000etch  CH.B Oxide
CH.B JIM OX
 Clean and
Semi-clean
 yes  ~300nm    
 Mrc  Oxide  Contaminated  no  20nm    
 Drytek4  Oxide  Contaminated  no      
 PT-Ox  Oxide  Contaminated  yes  300nm  300nm  1 : 1

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