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Oxide Etching In P5000etch, CH B OXIDE, semi-clean

A description of the standard oxide etch recipe, CH B OXIDE, used in the P5000etch.

Purpose:

To etch anisotropically silicon dioxide and silicon nitride

  Equipment:

p5000etch

 Time of Execution:

Overhead of about 5 mins per wafer plus etch time.  Cassette-to-cassette feed with 50 wafers maximum, 8 wafers per pumpdown.

 Step Summary:

CH B OXIDE
CHF3
CF4
Ar
Pressure
Power
Gauss
Set Up
25 50 100 250mT 0 0
Man Etch
25 50 100 250mT 500W 60G
Etch Rates; SiO2 = ~300nm/min

 Detailed Procedure:

 Please see p5000etch instructions.

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