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You are here: Home / Process / Process Modules / Etching / Dry Etching / Silicon Dioxide Etching at SNF / Silicon Dioxide and Nitride Etching in AMT Etcher, Program #4 (semi-clean)

Silicon Dioxide and Nitride Etching in AMT Etcher, Program #4 (semi-clean)

A concise description of the Via Etch process, Program #4. Note; this etch is also used to create AMSL Zero Level (Global) Target Marks.

Purpose:

To etch anisotropically silicon dioxide, silicon nitride and ASML zero level target marks

  Equipment:

Amtetcher

 Time of Execution:

Overhead (pumpdown and pump and purge cycles) of about 20 mins

plus etch time, maximum 24 wafers.

 Step Summary:

O2 30sccm

CHF3 50sccm

 40 mT

 Max 1600W, -530V

 SiO2 etchrate = ~29nm/min, SiN etchrate = ~83nm, Low stress SiN = ~78nm, Si = ~24nm, Resist etch rate =39nm

 Detailed Procedure:

 Please see amtetcher instructions.

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