Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Process / Process Modules / Etching / Dry Etching / Silicon Dioxide Etching at SNF / Silicon Dioxide and Nitride Etching in AMT Etcher, Program #3 (semi-clean)

Silicon Dioxide and Nitride Etching in AMT Etcher, Program #3 (semi-clean)

Etching in the AMT etcher (semi-clean) using the standard oxide recipe (Program #3) is described.

Purpose:

To etch anisotropically silicon dioxide

  Equipment:

Amtetcher

 Time of Execution:

Overhead (pumpdown and pump and purge cycles) of about 20 mins

plus etch time.

 Step Summary:

O2 6sccm

CHF3 85sccm

 40 mT

 Max 1600W, -530V

 SiO2 etchrate = ~350A/min, SiN etchrate = ~311A, Resist etch rate = ~111A

 Detailed Procedure:

 Please see amtetcher instructions.

Document Actions