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Silicon Dioxide and Silicon Nitride etching Using the MRC Etcher (contaminated)

A concise description of a typical oxide and nitride etch using the mrc.

Purpose

The purpose of this module is to give the user concise information on the etching of SiO2 and SiN in the mrc.

Equipment

mrc

Time of execution

approximately 15 mins to etch 100nm of SiN for one wafer

Step Summary

CHF3 = 15sccm

O2 = 3sccm

50mt

50W

 Etch rate = 60nm/min for both SiO2 and SiN.

Note: both oxide and nitride etch at the same rate.

 

Detailed Procedure

Please refer to the equipment information for mrc

 

 

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