Silicon Dioxide and Silicon Nitride etching Using the MRC Etcher (contaminated)
The purpose of this module is to give the user concise information on the etching of SiO2 and SiN in the mrc.
Time of execution
approximately 15 mins to etch 100nm of SiN for one wafer
CHF3 = 15sccm
O2 = 3sccm
Etch rate = 60nm/min for both SiO2 and SiN.
Note: both oxide and nitride etch at the same rate.
Detailed ProcedurePlease refer to the equipment information for mrc