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Resist stripping, Descum and Polymer Removal in drytek2 (semi-clean)

This process module describes the recipes available for resist and polymer etching in drytek2. All the recipes use an O2 plasma as the process gas, but have different chamber pressure or time variables.

Purpose:

Drytek2 provides a low power option to labmembers wanting to remove a small amount (less than 20nm) of photoresist or polymer.  Resist stripping is available, but labmembers should be warned that due to the low power (about 85W) nature of the process stripping will take a long time.  Labmembers with runs of full 4 inch wafers should consider the gasonics for resist ashing.

 Equipment: 

drytek2

 

 Time of Execution:

 approximately 10 minutes for up to 6 wafers

 

Step Summary:

 

Resist Stripping Recipe

Gas- O2  100sccm

Power- 500W

Chamber Pressure- 500mT

Time- Varied (~40nm/min)

 

Descum and Polymer Removal Recipe

Gas- O2  100sccm

Power- 500W

Chamber Pressure- 150mT

Time- 30 seconds

 

Detailed Procedure:

 

Please refer to the operating instructions for drytek2.

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