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Resist Stripping in MRC (contaminated)

This module describes resist stripping using the mrc.

Purpose:

 To strip photoresist.  This recipe can be used for decsum and polymer clean-up.

Equipment:

 mrc

Time of Execution:

 approximately 30 mins to etch about 1um of resist on one wafer (or pieces of wafer)

 

Step Summary:

 O2 = 15sccm

3mT

150W

Etch rate = ~130nm/min

 

Detailed Procedure:

please see the operating instructions for mrc

 

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