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Silicon Etching in Drytek2 (semi-clean)

This module covers Si, Polysi and Amorphous Si etching using drytek2. The gases used are SF6 and F22.

Purpose

The purpose of this module is to give the user concise information on the etching of Si in drytek2.

Equipment

drytek2

Time of execution

approximately 30 mins to etch 100nm of Si for up to 6 wafers

Step Summary

SF6 = 117sccm

F22 = 51sccm

150mt

400W

 Etch rate = 160-200nm/min

Detailed Procedure

Please see operating instructions for drytek2.

 Note: for ASML Zero Level (Global) Target Marks use 30 secs.

 

 

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