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Silicon Etching in Lampoly (clean)

A concise description of the standard poly etch recipe (Program #1) and a recipe used for ASML targets (Program #3) in Si is given.

Purpose:

To etch single crystal, polycrystal and amorphous silicon

Equipment:

lampoly

Time of Execution:

 Overhead of about 40 mins plus etch time for 25 wafers

 

Step Summary:

Standard Recipe

Recipe 1
C2F6
HBr
Cl2
O2 (20%)
Pressure
RF Top
RF Bottom
Break Through
100sccm - - - 13mT 250W 45W
Main Etch
- 100sccm 40sccm 5sccm 10mT 250W 60W
Over Etch
- 50sccm - 5sccm 15mT 250W 45W

ASML Target Recipe

Recipe 3
 Time C2F6
 HBr Cl2
O2 (20%)
Pressure
RF Top
Rf Bottom
Break Through
 10 secs
100sccm - - -
13mT 250W 45W
Main Etch  17-23 secs
(20s + 1200A)
- 100sccm 40sccm 5sccm 10mT 250W 60W
Over Etch
 0 secs
- 50sccm - 5sccm 15mT 250W 45W
Etch Rates
Poly
Oxide
Selectivity
BT 107nm 18nm 6 : 1
ME 320nm 15nm 21 : 1
OE 233nm 3nm 89 : 1

Detailed Procedure:

 Please see equipment instructions for lampoly

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