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Silicon Etching in P5000etch (clean)

A concise description of the standard poly etch recipe is given. This is the original recipe supplied by Applied Materials during machine qualification. Please note that chamber c, the Si etch chamber, is for clean materials only. No metals are allowed.

Purpose:

 To etch anisotropically Si

Equipment:

 P5000etch

Time of Execution:

 Overhead of about 5 mins per wafer plus etch time.  Cassette-to-cassette feed with 50 wafers maximum, 8 wafers per pumpdown.

 

Step Summary:

CH.C POLY ETCH
CF4
Cl
HBr
He/O2
Pressure
Power
 Gauss
Break Through
35sccm 0 0 0 100mT 250W 0G
Main Etch
0 20sccm 20sccm 0 100mT 200W 40G
Over Etch
0 10sccm 30sccm 6sccm 100mT 90W 40G

 Etch rates; poly = 207nm/min, PR = 37nm/min

Note; for AMSL Zero Layer Targets use 5 Sec in Break Through, 27 secs in Main Etch and 0 secs for Over Etch.  This should etch about 120nm.

Detailed Procedure:

 Please see equipment information for p5000etch

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