Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Process / Process Modules / Etching / Dry Etching / Si and Polysilicon Etching at SNF / Silicon Trench Etch Using Amtetcher, Program #1 (semi-clean)

Silicon Trench Etch Using Amtetcher, Program #1 (semi-clean)

A description of the Si trench etch recipe for amtetcher

Purpose:

To etch anisotropically silicon

  Equipment:

Amtetcher

 Time of Execution:

Overhead (pumpdown and pump and purge cycles) of about 20 mins

plus etch time, 24 wafers maximum.

 Step Summary:

NF3 35sccm

 40 mT

 Max 1600W, -530V

 Si etchrate = ~52nm/min, SiO2 etchrate = ~28nm Resist etch rate = ~35nm

 Detailed Procedure:

 Please see amtetcher instructions.

Document Actions