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Summary of Nitride Etch Processes in SNF

The following information is provided to SNF users to aid in the determination of appropriate equipment for their etching needs. Standard or typical programs and results are given. The user may want to tailor the programs to fit their specific process. Etch rates and selectivities are given as a starting point only and should not be considered to be current. It is highly recommended that users establish the etch rates for their work by the use of test wafers as close in material and masking pattern as possible to the device wafers to be etched.
Tool
Etch Program
Cleanliness Level
Endpoint detection
Etch Rate
SiN
Etch Rate
PR
Selectivity
SiN : PR
 Amtetcher  Program #3
 Clean and
Semi-clean
 no  33nm  11nm  3 : 1
 P5000
Chamber B

CH.B NIT-SPACER
CH.B CARLF
 Clean and
Semi-clean
 yes      
 Drytek2  Nitride  Clean, Semi-clean and contaminated
 no  65nm    
 Drytek4  Nitride  Contaminated  no  37-64nm    
 Mrc  Nitride  Contaminated  no  60nm    
 PT-Ox  Nitride  Contaminated  yes  300nm  300nm  1 : 1

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