Nitride Etching in Drytek2 (semi-clean)
The purpose of this module is to give the user concise information on the etching of SiN in drytek2.
Time of execution
approximately 15 mins to etch 100nm of SiN for up to 6 wafers
SF6 = 100sccm
O2 = 10sccm
Etch rate = 65nm/min for standard SiN, 98nm/min for low stress SiN, 9nm/min for thermal oxide
Selectivity of SiN to thermal oxide = 7:1 (standard SiN), 11:1 (low stress SiN)
Note: the selectivity of SiN to Si is not good.
Please see operating instructions for drytek2.