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Nitride Etching in P5000etch, CH.B CARLF (semi-clean)

A concise description of the program CH.B CARLF is given. This is the nitride etch recipe that is used in the EE410 CMOS process.

Purpose:

To etch anisotropically silicon nitride

 Equipment:

p5000etch

 Time of Execution:

Overhead of about 5 mins per wafer plus etch time.  Cassette-to-cassette feed with 50 wafers maximum, 8 wafers per pumpdown.

 Step Summary:

CH B NIT-SPACER
CF4
 O2  Pressure Power
Gauss
Set Up
100
 2  250mT 0 0
Main Etch
100
 2  250mT 300W 60G

 Detailed Procedure:

 Please see p5000etch instructions.

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