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Nitride Etching in P5000etch, CH.B NIT-SPACER (semi-clean)

A concise description of one of several nitride etch programs available for the p5000etch. CH.B NIT-SPACER gives good selectivity for nitride and oxide.

Purpose:

To etch anisotropically silicon nitride

 Equipment:

p5000etch

 Time of Execution:

Overhead of about 5 mins per wafer plus etch time.  Cassette-to-cassette feed with 50 wafers maximum, 8 wafers per pumpdown.

 Step Summary:

CH B NIT-SPACER
CHF3
CF4
Ar
 O2  Pressure Power
Gauss
Set Up
22 15
90  7  30mT 0 0
Main Etch
22 15
90
 7  30mT 50W 60G
Etch Rates; SiN = 34nm/min, SiO2 = ~14nm/min
Use endpoint algorithum Nit_spacer

 Detailed Procedure:

 Please see p5000etch instructions.

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