Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Process / Process Modules / Etching / Wet Etching / Silicon Dioxide (SiO2) Wet Etching at SNF

Etch Rates for Various Non-Metal Thin Films

This chart contains etch rates for thin film and etchants commonly used at SNF. Thermally grown and deposited, doped and undoped, oxides are included.

 

Wet Etch rates for Various Non-Metal Films


These etch rates were performed at SNF on films that were processed here. Etch rates are listed in units of angstroms per minute and represent only approximate values. Note that etch rates are dependent on etchant temperature, age, and history, as well as conditions of film growth or deposition.

 

 

6:1 Buff HF

20:1 Buff HF

50:1 HF

10:1 HF

Hot Phos.

H2O2

Al etch

Pad Etch

Freckle Etch

Thermal Oxide

910

300

50

280

<10

---

<10

385

73

LTO Undensified

2900

740

300(a)

920

<10

---

<10

2370

459

4% Undensified

4340

1000

350

2000

16

---

<10

4278

2530

8% Undensified

6000

1650

600

3300

30

---

<10

5561

2970

LTO Densified

1400

400

87

715

<10

---

<10

642

91

4% Densified

1625

490

90

1460

<10

---

---

1560

1355

8% Densified

2900

725

290

1500

<10

---

<10

3120

2385

Std Nitride

<10

<10

<10

36

35

---

---

*

43

Low Stress Nitride

<10

<10

<10

40

32

---

---

**

148

Undoped Poly

---

---

---

---

<10

---

<10

---

265


Notes:

*For the Nitride wafers, when a 1600A stress sample was used 68A were stripped off in the first minute and 4A after that. However, when a 300A sample was used, 8A were removed in the first minute and each additional minute thereafter.

**Low Stress Nitride in Pad etch 337A in the first minute and 4A thereafter.

***Hot Phosphorus was 152C

****Aluminum Etch was 40C

(a)Correction by Brian Greene 6/14/01

Document Actions