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HF Vapor Etching of Oxide, clean

This module includes information about Hydrofluoric Acid vapor etching of clean wafers.


HF vapor etching is used primarily to remove buried layers of oxide under overhanging devices or features, esp. on SOI wafers.  Since the porcess uses heat 49% hydrofluoric acid labmembers are advised to use extreme caution when using the system.



Time of Execution:

 Approximately 20 minutes plus etch time


Step Summary:



Detailed Procedure:

For more details please see HF Vapor Etcher



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