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HF Vapor Etching of Oxide, clean

This module includes information about Hydrofluoric Acid vapor etching of clean wafers.

Purpose:

HF vapor etching is used primarily to remove buried layers of oxide under overhanging devices or features, esp. on SOI wafers.  Since the porcess uses heat 49% hydrofluoric acid labmembers are advised to use extreme caution when using the system.

Equipment:

 wbnitride

Time of Execution:

 Approximately 20 minutes plus etch time

 

Step Summary:

 

 

Detailed Procedure:

For more details please see HF Vapor Etcher

 

 

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