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Basic Processing at SNF Runsheet

Basic Processing at SNF is a two day class offered to labmembers that are new to processing in a cleanroom environment. The runsheet outlines good engineering practices, obtaining wafers, oxidation, photolithgraphy, alignment and wet and dry etching.

Basic Processing at SNF

 

STEP 0.10 - WAFER SCRIBING

Starting materials is n-type silicon. Add a test wafers labeled T1.  T1 is to be used for thickness measurements and for etch rate determination.

 

Start Date __________                    Operator         __________

 

 

STEP 0.20 - STANDARD RESIST STRIP

Purpose:  To remove scribe dust.  All device wafers plus T1. 

 

wbnonmetal, 9:1 Piranha @ 120°C, 20’

 

Date _________  Time      _________  Operator    _________

Comments_____________________________________

 

 

STEP 0.30 - STANDARD PRE-DIFFUSION CLEAN  

All device wafers plus T1. 

 

wbdiff, 5:1:1 H2O:H2O2:NH4OH@ 50°C, 10’

50:1 DI:HF @ Room Temp, 30 sec

5:1:1  DI:H2O2:HCl @ 70°C, 10’

 

Date _________  Time      _________      Operator_________

Comments_____________________________________

 

 

STEP 0.40 - FIELD OXIDATION

All wafers plus T1.  Ramped process 10’D/38’W/10’D @ 1000°C, ≈ 2900Å,

 

tylan1-2  Program ‘WET1000’ on WET disk. 

 

Date _________    Time    _________  Operator    _________

System used  ____________

 

Use Nanospec, program 1 (oxide) to measure T1 oxide thickness and uniformity.

 

System used:             _nanospec       _nanospec2

T______  C______  B________  R________  L________  Avr________

Thk %Uniformity ______________

Comments______________________________________

 

 

STEP 0.50 - PHOTOMASK #1- ACTIVE AREA

 

STEP 0.51 - SINGE & PRIME

yes standard oven singe/HMDS prime

 

Date _________Time        _________    Operator  _________

Comments____________________________________

 

 

STEP 0.52 - RESIST SPIN COAT

Apply 1 micron of 3612 positive resist, using SVG Coat track programs 7 (coat) and 1 (prebake).

 

System used:                    _svgcoat    _svgcoat2

 

Date_________ Time        _________       Operator_________

Comments_____________________________________

 

 

STEP 0.53 – BLANKET EXPOSURE

Expose using Karl Suss or EV Align.    <mask name?>

 

System:                             _Karlsuss  _Karlsuss2   _evalign

Exposure used:_________________________________

 

Date _________Time        _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.54 - RESIST DEVELOP

Develop using SVG Dev track, programs 3 (develop) and 1 (bake)

 

System:                             _svgdev      _svgdev2

 

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.55 - INSPECTION

Visual microscope inspection.  Check for defects and alignment/exposure quality.

 

Wafers inspected             ____   ____   ____   ____   ____

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.60 - DESCUM

All device wafers plus T1.

 

drytek2, Program ‘DESCUM’ (100sccm O2, 150mT, 500W, 30 sec)

 

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.70 - SiO2 ETCH

All device wafers plus T1.  Use TI to establish etch time (one minute in etchant.)

 

wbnonmetal, in 6:1 buffered HF, 150-250 sec

 

Date_________   Time      _________    Operator  _________

 

 

Use Nanospec program 1 (oxide) to measure T1 to establish etch rate.  There should be100nm of oxide left.

 

System used:             _nanospec       _nanospec2

 

T________C________B________R________L________

Comments_____________________________________

 

 

STEP 0.80 - STANDARD RESIST STRIP

All device wafers plus T1. 

 

wbnonmetal, Piranha @ 120°C, 20’

 

Date_________  Time       _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.90 - PHOTOMASK #1- ACTIVE AREA

 

STEP 1.05 - SINGE & PRIME

yes standard oven singe/HMDS prime

 

Date _________Time        _________    Operator  _________

Comments____________________________________

 

 

STEP 0.91 - RESIST SPIN COAT

Apply 1 micron of 3612 positive resist, using SVG Coat track programs 7 (coat) and 1 (prebake).

 

System used:                    _svgcoat    _svgcoat2

 

Date_________ Time        _________       Operator_________

Comments_____________________________________

 

 

STEP 0.92 - ALIGNED EXPOSURE

 

System used:     _Karlsuss  _Karlsuss2   _evalign

<Mask name?>

 

Exposure used:_________________________________

 

Date _________Time        _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.93 - RESIST DEVELOP

Develop using SVG Dev track, programs 3 (develop) and 1 (bake)

 

System:                             _svgdev      _svgdev2

 

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 0.94 - INSPECTION

Visual microscope inspection.  Check for defects and alignment/exposure quality.

 

Wafers inspected             ____   ____   ____   ____   ____

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 1.00 - DESCUM

All device wafers plus T1.

 

drytek2, Program ‘DESCUM’ (100sccm O2, 150mT, 500W, 30 sec)

 

Date _________  Time      _________    Operator  _________

Comments_____________________________________

 

 

STEP 1.10 - SiO2 ETCH

All device wafers plus T1.  Use TI to establish etch time.  Etch all oxide.

 

wbnonmetal, in 6:1 buffered HF, 150-250 sec

 

Date_________   Time      _________    Operator  _________

 

 

Use Nanospec program 7 (thin oxide) to measure T1 to ensure complete oxide removal.

 

System used:             _nanospec       _nanospec2

 

T________C________B________R________L________

Comments_____________________________________

 

 

STEP 1.20 - STANDARD RESIST STRIP

All device wafers plus T1.

 

wbnonmetal, Piranha @ 120°C, 20’

 

Date_________  Time       _________    Operator  _________

Comments_____________________________________

 

 

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